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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TSM80N1R2CI C0G
Taiwan Semiconductor Corporation

TSM80N1R2CI C0G

Manufacturer Part Number TSM80N1R2CI C0G
Manufacturer Taiwan Semiconductor Corporation
Detailed Description MOSFET N-CH 800V 5.5A ITO220AB
Package ITO-220AB
In Stock 35145 pcs
Data sheet TSM80N1R2CI
Reference Price (In US Dollars)
4000
$1.21
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package ITO-220AB
Series -
Rds On (Max) @ Id, Vgs 1.2Ohm @ 1.8A, 10V
Power Dissipation (Max) 25W (Tc)
Package / Case TO-220-3 Full Pack, Isolated Tab
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 685 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 19.4 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Base Product Number TSM80

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TSM80N1R2CI C0G Datasheet PDF

Data sheet